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EconoDUAL3 Infineon IFF750B12ME7B11BPSA1 module with integrated NTC thermistor and current sense shunt

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EconoDUAL3 Infineon IFF750B12ME7B11BPSA1 module with integrated NTC thermistor and current sense shunt

Description : Power Driver Modules RoHS

Mfr. Part # : IFF750B12ME7B11BPSA1

Model Number : IFF750B12ME7B11BPSA1

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Product Overview

The EconoDUAL3 module with TRENCHSTOPIGBT7 and emitter controlled 7 diode, featuring PressFIT technology, an integrated temperature sensor, NTC, and current sense shunt, offers high power density for demanding applications. It is qualified for industrial applications according to relevant IEC standards.

Product Attributes

Brand: Infineon
Product Line: EconoDUAL3
Technology: TRENCHSTOP IGBT7, Emitter Controlled 7 Diode, PressFIT
Integrated Components: Temperature sensor, NTC-Thermistor, Current sense shunt
Certifications: Qualified for industrial applications according to IEC 60747, 60749 and 60068

Technical Specifications

Component	Parameter	Symbol	Note or test condition	Values	Unit
IGBT, Inverter	Collector-emitter voltage	VCES		1200	V
	Continuous DC collector current	ICDC	Tvj max = 175 C, TC = 95 C	750	A
	Maximum RMS module DC- terminal current	ItRMS	TTerminal = 90 C, TC = 90 C	562	A
	Repetitive peak collector current	ICRM	tp limited by Tvj op	1500	A
	Gate-emitter peak voltage	VGES		20	V
	Collector-emitter saturation voltage	VCE sat	IC = 750 A, VGE = 15 V	1.50 - 1.75	V
	Gate threshold voltage	VGEth	IC = 15.3 mA, VCE = VGE, Tvj = 25 C	5.15 - 6.45	V
	Input capacitance	Cies	f = 100 kHz, Tvj = 25 C, VCE = 25 V, VGE = 0 V	115	nF
	Turn-on delay time (inductive load)	tdon	IC = 750 A, VCC = 600 V, VGE = 15 V, RGon = 0.51	0.293 - 0.341	s
	Turn-off delay time (inductive load)	tdoff	IC = 750 A, VCC = 600 V, VGE = 15 V, RGoff = 0.51	0.450 - 0.587	s
	Turn-on energy loss per pulse	Eon	IC = 750 A, VCC = 600 V, L = 25 nH, VGE = 15 V, RGon = 0.51	36.7 - 70.5	mJ
	Turn-off energy loss per pulse	Eoff	IC = 750 A, VCC = 600 V, L = 25 nH, VGE = 15 V, RGoff = 0.51	63.6 - 123	mJ
	Thermal resistance, junction to case	RthJC	per IGBT	0.0520	K/W
Diode, Inverter	Repetitive peak reverse voltage	VRRM		1200	V
	Continuous DC forward current	IF		750	A
	Repetitive peak forward current	IFRM	tP = 1 ms	1500	A
	I2t - value	I2t	tP = 10 ms, VR = 0 V	35000 - 46800	As
	Forward voltage	VF	IF = 750 A, VGE = 0 V	1.60 - 2.10	V
	Peak reverse recovery current	IRM	VCC = 600 V, IF = 750 A, VGE = -15 V, -diF/dt = 6800 A/s	392 - 555	A
	Recovered charge	Qr	VCC = 600 V, IF = 750 A, VGE = -15 V, -diF/dt = 6800 A/s	44.5 - 124	C
	Reverse recovery energy	Erec	VCC = 600 V, IF = 750 A, VGE = -15 V, -diF/dt = 6800 A/s	18.2 - 48.9	mJ
NTC-Thermistor	Rated resistance	R25	TNTC = 25 C	5	k
	Deviation of R100	R/R	TNTC = 100 C, R100 = 493	-5 - 5	%
	Power dissipation	P25	TNTC = 25 C	20	mW
Package	Isolation test voltage	VISOL	RMS, f = 50 Hz, t = 1 min	3.4	kV
	Material of module baseplate			Al2O3
	Creepage distance terminal to baseplate	dCreep nom	(PD2, IEC 60664-1, Ed. 3.0)	> 15	mm
	Creepage distance terminal to terminal	dCreep nom	(PD2, IEC 60664-1, Ed. 3.0)	12.1	mm
	Clearance terminal to baseplate	dClear nom		> 12.5	mm
	Clearance terminal to terminal	dClear nom		10.0	mm
	Weight	G		345	g

2411011504_Infineon-IFF750B12ME7B11BPSA1_C7207027.pdf

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