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High reliability MOSFET JingYang TNM1230N5X designed for synchronous buck converter power applications

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High reliability MOSFET JingYang TNM1230N5X designed for synchronous buck converter power applications

Drain to Source Voltage : 30V

Current - Continuous Drain(Id) : 37A

RDS(on) : 12mΩ@10V,15A

Operating Temperature - : -55℃~+150℃

Gate Threshold Voltage (Vgs(th)) : 2.5V

Type : N-Channel

Reverse Transfer Capacitance (Crss@Vds) : 108pF

Number : 1 N-channel

Output Capacitance(Coss) : 126pF

Pd - Power Dissipation : 26W

Input Capacitance(Ciss) : 896pF

Gate Charge(Qg) : 9.8nC@4.5V

Description : N-Channel 30V 37A 26W Surface Mount DFN-8L(3x3)

Mfr. Part # : TNM1230N5X

Model Number : TNM1230N5X

Package : DFN-8L(3x3)

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Product Overview

The TNM1230N5X is a high cell density trenched N-channel MOSFET designed for synchronous buck converter applications. It offers excellent RDS(ON) and gate charge characteristics, meeting RoHS and Green Product requirements, with 100% EAS guaranteed and full functional reliability.

Product Attributes

Brand: JY Electronics (implied by website)
Certifications: RoHS, Green Product
Reliability: 100% EAS guaranteed

Technical Specifications

Parameter	Symbol	Test Conditions	Min	Typ	Max	Unit
Absolute Maximum Ratings
Drain-Source Voltage	VDSS				30	V
Gate Source Voltage	VGSS				20	V
Drain Current (Continuous)	ID	TA=25C			37	A
Drain Current (Continuous)	ID	TA=100C			24	A
Drain Current (Pulse)	IDM	*B			75	A
Power Dissipation	PD	TA=25C			26	W
Power Dissipation	PD	TA=100C			21	W
Operating/Storage Temperature	TJ/TSTG		-55		150	C
Single Pulse Avalanche Energy	EAS				24.2	mJ
Thermal Resistance, Junction-to-Ambient	RJA			75		C/W
Electrical Characteristics
Static Drain-Source Breakdown Voltage	V(BR)DSS	VGS=0VID=250uA	30			V
Zero Gate Voltage Drain Current	IDSS	VDS=24VVGS=0V			1	uA
Gate Threshold Voltage	VGS(TH)	VDS=VGSIDS=250uA	1.0		2.5	V
Gate Leakage Current	IGSS	VGS=20VVDS=0V			100	nA
Drain-Source On-state Resistance	RDS(on)	VGS=10VID=15A			12	m
Drain-Source On-state Resistance	RDS(on)	VGS=4.5VID=10A			16.5	m
Diode Forward Voltage	VSD	ISD=1AVGS=0V			1	V
Switching Characteristics
Total Gate Charge	Qg	VGS=4.5VVDS=15VID=12A		9.8		nC
Gate-Source Charge	Qgs			2.2		nC
Gate-Drain Charge	Qgd			5.5		nC
Turn-on Delay Time	td(on)	VGS=10VVDD=15VID=20A RGEN=1.5		6.4		ns
Turn-on Rise Time	tr			39		ns
Turn-off Delay Time	td(off)			21		ns
Turn-off Fall Time	tf			4.7		ns
Capacitance
Input Capacitance	Ciss	VGS=0VVDS=15Vf=1MHZ		896		pF
Output Capacitance	Coss			126		pF
Reverse Transfer Capacitance	Crss			108		pF

2405091033_JingYang-TNM1230N5X_C5364047.pdf

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