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switching MOSFET GOODWORK IRF640 with low thermal resistance and high continuous drain current rating

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switching MOSFET GOODWORK IRF640 with low thermal resistance and high continuous drain current rating

Configuration : -

Drain to Source Voltage : 200V

Current - Continuous Drain(Id) : 18A

Operating Temperature - : -

RDS(on) : 180mΩ@10V,11A

Gate Threshold Voltage (Vgs(th)) : 4V@250uA

Type : -

Reverse Transfer Capacitance (Crss@Vds) : 120pF

Number : 1 N-channel

Output Capacitance(Coss) : 400pF

Input Capacitance(Ciss) : 1.3nF

Pd - Power Dissipation : 2W

Gate Charge(Qg) : -

Description : N-Channel 200V 18A 2W Through Hole TO-220-3L

Mfr. Part # : IRF640

Model Number : IRF640

Package : TO-220-3L

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Product Overview

The IRF640 is a third-generation HEXFET MOSFET from International Rectifier, designed for cost-effectiveness and superior performance. It offers a combination of fast switching, ruggedized design, low on-resistance, and low thermal resistance, making it suitable for power dissipation levels up to approximately 50 watts. The TO-220-3L package is widely adopted in commercial and industrial applications.

Product Attributes

Brand: International Rectifier
Product Type: MOSFET (N-Channel)
Package: TO-220AB

Technical Specifications

Parameter	Symbol	Test Conditions	Min	Typ	Max	Unit
Continuous Drain Current	ID	VGS @ 10 V			18	A
Power Dissipation	PD					W
Linear Derating Factor					1.0	W/
Gate-Source Voltage	VGS				20	V
Single Pulse Avalanche Energy	EAS	(note 1)			580	mJ
Thermal Resistance Junction to Ambient	RJA				62.5	/W
Junction Temperature	TJ				150
Storage Temperature	TSTG		-55		+150
Drain-source breakdown voltage	V(BR)DSS	VGS=0V,ID=250A	200			V
Gate-threshold voltage	V(GS)th	VDS=VGS, ID=250A	2		4	V
Gate-body leakage	lGSS	VDS=0V, VGS=20V			100	nA
Zero gate voltage drain current	IDSS	VDS=200V, VGS=0V			25	A
Drain-source on-resistance	RDS(on)	VGS=10V, ID=11A (note 2)		0.18
Forward transconductance	gfs	VDS=50V, ID=11A (note 2)		6.7		S
Diode forward voltage	VSD	IS=18A, VGS=0V (note 2)			2	V
Input capacitance	Ciss	VDS=25V, VGS=0V,f=1MHz (note 3)		1300		pF
Output capacitance	Coss	VDS=25V, VGS=0V,f=1MHz (note 3)		400		pF
Reverse transfer capacitance	Crss	VDS=25V, VGS=0V,f=1MHz (note 3)		120		pF
Turn-on time	td(on)	VDD=100V,RD=5.4, ID=18A, RG=9.1 (note 2,3)		14		ns
Rise time	tr	VDD=100V,RD=5.4, ID=18A, RG=9.1 (note 2,3)		51		ns
Turn-off time	td(off)	VDD=100V,RD=5.4, ID=18A, RG=9.1 (note 2,3)		45		ns
Fall time	tf	VDD=100V,RD=5.4, ID=18A, RG=9.1 (note 2,3)		36		ns

2410121928_GOODWORK-IRF640_C17702911.pdf

switching MOSFET GOODWORK IRF640 with low thermal resistance and high continuous drain current rating Images

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