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Low On Resistance N Channel MOSFET HUAYI HYG025N06LS1D Suitable for High Frequency Power Applications

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Low On Resistance N Channel MOSFET HUAYI HYG025N06LS1D Suitable for High Frequency Power Applications

Drain to Source Voltage : 60V

Current - Continuous Drain(Id) : 160A

RDS(on) : 3.3mΩ@10V

Operating Temperature - : -55℃~+175℃

Gate Threshold Voltage (Vgs(th)) : 3V@250uA

Type : N-Channel

Reverse Transfer Capacitance (Crss@Vds) : 10.2pF

Number : 1 N-channel

Input Capacitance(Ciss) : 3.915nF

Pd - Power Dissipation : 125W

Gate Charge(Qg) : 58.3nC

Description : N-Channel 60V 160A 125W Surface Mount TO-252-2L

Mfr. Part # : HYG025N06LS1D

Model Number : HYG025N06LS1D

Package : TO-252-2L

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Product Overview

The HYG025N06LS1D is a single N-Channel Enhancement Mode MOSFET designed for high-performance applications. It features low on-resistance (RDS(ON) = 2.6 m typ. @ VGS = 10V), 100% avalanche tested, and a reliable, rugged design. Halogen-free and RoHS compliant versions are available. This MOSFET is suitable for high frequency point-of-load synchronous buck converters, power tool applications, and networking DC-DC power systems.

Product Attributes

Brand: HYG
Model: HYG025N06LS1D
Package Type: TO-252-2L
Certifications: RoHS Compliant, Halogen-Free Devices Available
Material: Lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight in homogeneous material and total of Br and Cl does not exceed 1500ppm by weight)
Origin: China (Huayi Microelectronics Co., Ltd.)

Technical Specifications

Parameter	Symbol	Test Conditions	Unit	Min	Typ.	Max
Absolute Maximum Ratings
Drain-Source Voltage	VDSS	Tc=25C Unless Otherwise Noted	V			60
Gate-Source Voltage	VGSS		V			20
Maximum Junction Temperature	TJ		C			175
Storage Temperature Range	TSTG		C	-55		175
Source Current-Continuous (Body Diode)	IS	Tc=25C, Mounted on Large Heat Sink	A			160
Pulsed Drain Current	IDM	Tc=25C	A			620
Continuous Drain Current	ID	Tc=25C	A			160
Continuous Drain Current	ID	Tc=100C	A			113
Maximum Power Dissipation	PD	Tc=25C	W			125
Maximum Power Dissipation	PD	Tc=100C	W			62.5
Thermal Resistance, Junction-to-Case	RJC		C/W		1.2
Thermal Resistance, Junction-to-Ambient	RJA	Surface mounted on FR-4 board.	C/W		110
Single-Pulsed-Avalanche Energy	EAS	L=0.3mH	mJ		301.8
Static Characteristics
Drain-Source Breakdown Voltage	BVDSS	VGS=0V,IDS=250A	V	60
Drain-to-Source Leakage Current	IDSS	VDS=60V,VGS=0V	A			1
Drain-to-Source Leakage Current	IDSS	TJ=100C	A			50
Gate Threshold Voltage	VGS(th)	VDS=VGS, IDS=250A	V	1.0	2.1	3.0
Gate-Source Leakage Current	IGSS	VGS=20V,VDS=0V	nA			100
Drain-Source On-State Resistance	RDS(ON)	VGS=10V,IDS=40A	m		2.6	3.3
Drain-Source On-State Resistance	RDS(ON)	VGS=4.5V,IDS=40A	m		3.8	4.7
Diode Characteristics
Diode Forward Voltage	VSD	ISD=40A,VGS=0V	V		0.85	1.3
Reverse Recovery Time	trr	ISD=40A,dISD/dt=100A/s	ns		41.1
Reverse Recovery Charge	Qrr		nC		48.2
Dynamic Characteristics
Gate Resistance	RG	VGS=0V,VDS=0V,F=1MHz			0.58
Input Capacitance	Ciss	VGS=0V, VDS=25V, Frequency=1.0MHz	pF		3915
Output Capacitance	Coss		pF		1310
Reverse Transfer Capacitance	Crss		pF		10.2
Turn-on Delay Time	td(ON)	VDD=30V,RG=4, IDS=40A,VGS=10V	ns		15.3
Turn-on Rise Time	Tr		ns		34
Turn-off Delay Time	td(OFF)		ns		33
Turn-off Fall Time	Tf		ns		9.4
Gate Charge Characteristics
Total Gate Charge	Qg10V	VDS =48V, VGS=10V, ID=40A	nC		58.3
Total Gate Charge	Qg4.5V		nC		27.7
Gate-Source Charge	Qgs		nC		15.7
Gate-Drain Charge	Qgd		nC		9.7

2409302203_HUAYI-HYG025N06LS1D_C2891600.pdf

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