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switching MOSFET Jingdao Microelectronics F10N70 with low gate charge and high avalanche energy rating

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switching MOSFET Jingdao Microelectronics F10N70 with low gate charge and high avalanche energy rating

Drain to Source Voltage : 700V

Current - Continuous Drain(Id) : 10A

RDS(on) : 900mΩ@10V

Operating Temperature - : -55℃~+150℃

Gate Threshold Voltage (Vgs(th)) : 4V

Type : N-Channel

Reverse Transfer Capacitance (Crss@Vds) : 9pF

Input Capacitance(Ciss) : 1.65nF

Output Capacitance(Coss) : 140pF

Pd - Power Dissipation : 45W

Gate Charge(Qg) : 28nC@10V

Description : 700V 10A 900mΩ@10V 4V 45W ITO-220ABW Single FETs, MOSFETs RoHS

Mfr. Part # : F10N70

Model Number : F10N70

Package : ITO-220ABW

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Product Overview

The F10N70 is a high voltage N-channel Power MOSFET designed for high-speed switching applications. It offers improved characteristics such as fast switching time, low gate charge, low on-state resistance, and high rugged avalanche characteristics. This MOSFET is typically used in switching power supplies and adaptors.

Product Attributes

Brand: Jingdao Microelectronics co.LTD
Origin: Shandong, China
Case Material: "Green" molding compound, UL flammability classification 94V-0, "Halogen-free".
Certifications: RoHS compliant

Technical Specifications

Parameter	Symbol	Rating	Unit	Conditions
ABSOLUTE MAXIMUM RATINGS
Drain-Source Voltage	VDSS	700	V
Gate-Source Voltage	VGSS	±30	V
Continuous Drain Current	ID	10	A	Tc=25°C
Pulsed Drain Current	IDM	40	A	Note 2
Avalanche Energy Single Pulsed	EAS	800	mJ	Note 3
Peak Diode Recovery dv/dt	dv/dt	2.1	V/ns	Note 4
Power Dissipation	PD	6.3	W	Tc=25°C
Junction to Ambient Thermal Resistance	RthJA	63	°C/W	Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.
Junction to Case Thermal Resistance	RthJC	2.76	°C/W
Operation Junction Temperature and Storage Temperature	Tj, stg	-55 ~ +150	°C
ELECTRICAL CHARACTERISTICS
Drain-Source Breakdown Voltage	BVDSS	700	V	VGS=0V, ID=250µA
Gate-Source Leakage Current	IGSS	±100	nA	VGS=±30V, VDS=0V
Drain-Source Leakage Current	IDSS	1	µA	VDS=700V, VGS=0V
Gate Threshold Voltage	VGS(TH)	2.0	V	VDS=VGS, ID=250µA
Static Drain-Source On-State Resistance	RDS(ON)	1.2	Ω	VGS=10V, ID=5.0A
Input Capacitance	CISS	1650	pF	VDS=25V, VGS=0V, f=1.0MHz
Output Capacitance	COSS	140	pF	VDS=25V, VGS=0V, f=1.0MHz
Reverse Transfer Capacitance	CRSS	9	pF	VDS=25V, VGS=0V, f=1.0MHz
Total Gate Charge	QG	28	nC	VDS=560V, VGS=10V, ID=10A, IG=1mA (NOTE1,2)
Turn-On Delay Time	tD(ON)	9.5	ns	VDS=100V, VGS=10V, ID=10A, RG=25Ω (NOTE1,2)
Turn-On Rise Time	tR	13	ns	VDS=100V, VGS=10V, ID=10A, RG=25Ω (NOTE1,2)
Turn-Off Delay Time	tD(OFF)	40	ns	VDS=100V, VGS=10V, ID=10A, RG=25Ω (NOTE1,2)
Turn-Off Fall Time	tF	52	ns	VDS=100V, VGS=10V, ID=10A, RG=25Ω (NOTE1,2)
Maximum Body-Diode Continuous Current	IS	10	A
Maximum Body-Diode Pulsed Current	ISM	40	A
Drain-Source Diode Forward Voltage	VSD	1.4	V	IS=10A, VGS=0V (Note 1)
Reverse Recovery Time	trr	571	ns	IS=10A, VGS=0V, di/dt=100A/us (Note 1)
Reverse Recovery Charge	Qrr	4.7	µC	IS=10A, VGS=0V, di/dt=100A/us (Note 1)

2412111839_Jingdao-Microelectronics-F10N70_C7469040.pdf

switching MOSFET Jingdao Microelectronics F10N70 with low gate charge and high avalanche energy rating Images

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