| Drain-Source Voltage (VDSS) | | | | 100 | V |
| Gate-Source Voltage (VGSS) | | | | 20 | V |
| Drain Current - Continuous (ID) | TA=25oC | | | 2.6 | A |
| Drain Current - Pulsed (ID) | | | | 20 | A |
| Maximum Power Dissipation (PD) | TA=25oC (Note 1a) | | | 1.6 | W |
| Maximum Power Dissipation (PD) | TA=25oC (Note 1b) | | | 0.8 | W |
| Operating and Storage Junction Temperature Range (TJ, TSTG) | | 55 | | +125 | C |
| Thermal Resistance, Junction-to-Ambient (RJA) | Note 1a | | 78 | | C/W |
| Thermal Resistance, Junction-to-Case (RJC) | Note 1 | | 30 | | C/W |
| Drain-Source Avalanche Energy (WDSS) | Single Pulse, VDD = 50 V, ID=2.6 A | | 90 | | mJ |
| Drain-Source Avalanche Current (IAR) | | | 2.6 | | A |
| DrainSource Breakdown Voltage (BVDSS) | VGS = 0 V, ID = 250 A | 100 | | | V |
| Breakdown Voltage Temperature Coefficient (BVDSS/TJ) | ID = 250 A, Referenced to 25C | | 99 | | mV/C |
| Zero Gate Voltage Drain Current (IDSS) | VDS = 80 V, VGS = 0 V | | | 10 | A |
| GateBody Leakage, Forward (IGSSF) | VGS = 20 V, VDS = 0 V | | | 100 | nA |
| GateBody Leakage, Reverse (IGSSR) | VGS = 20 V, VDS = 0 V | | 100 | | nA |
| Gate Threshold Voltage (VGS(th)) | VDS = VGS, ID = 250 A | 1 | 2.3 | 3 | V |
| Gate Threshold Voltage Temperature Coefficient (VGS(th)/TJ) | ID = 250 A, Referenced to 25C | | 6 | | mV/C |
| Static DrainSource On Resistance (RDS(on)) | Vgs = 10 V, Id = 1 A | 85 | 90 | 110 | m |
| Static DrainSource On Resistance (RDS(on)) | Vgs = 4.5 V, Id = 1 A | | 85 | | m |
| Static DrainSource On Resistance (RDS(on)) | Vgs = 10 V, Id = 2.6 A | | 90 | | m |
| OnState Drain Current (ID(on)) | VGS = 10 V, VDS = 5 V | | 10 | | A |
| Forward Transconductance (gFS) | VDS = 10 V, ID = 2.6 A | | 10 | | S |
| Input Capacitance (Ciss) | VDS = 50 V, V GS = 0 V, f = 1.0 MHz | | 660 | | pF |
| Output Capacitance (Coss) | VDS = 50 V, V GS = 0 V, f = 1.0 MHz | | 55 | | pF |
| Reverse Transfer Capacitance (Crss) | VDS = 50 V, V GS = 0 V, f = 1.0 MHz | | 40 | | pF |
| TurnOn Delay Time (td(on)) | VDD = 50 V, ID = 1 A, VGS = 10 V, RGEN = 6 | | 6 | 11 | ns |
| TurnOn Rise Time (tr) | VDD = 50 V, ID = 1 A, VGS = 10 V, RGEN = 6 | | 3.5 | 7 | ns |
| TurnOff Delay Time (td(off)) | VDD = 50 V, ID = 1 A, VGS = 10 V, RGEN = 6 | | 23 | 37 | ns |
| TurnOff Fall Time (tf) | VDD = 50 V, ID = 1 A, VGS = 10 V, RGEN = 6 | | 3.7 | 7.4 | ns |
| Total Gate Charge (Qg) | VDS = 50 V, ID = 2.6 A, VGS = 10 V | | 14 | 20 | nC |
| GateSource Charge (Qgs) | VDS = 50 V, ID = 2.6 A, VGS = 10 V | | 2.3 | | nC |
| GateDrain Charge (Qgd) | VDS = 50 V, ID = 2.6 A, VGS = 10 V | | 3.6 | | nC |
| Maximum Continuous DrainSource Diode Forward Current (IS) | | | 1.3 | | A |
| DrainSource Diode Forward Voltage (VSD) | VGS = 0 V, IS = 1.3 A (Note 2) | | 0.76 | 1.2 | V |
| Diode Reverse Recovery Time (trr) | IF = 2.6 A diF/dt = 100 A/s (Note 2) | | 31 | | nS |
| Diode Reverse Recovery Charge (Qrr) | IF = 2.6 A diF/dt = 100 A/s (Note 2) | | 56 | | nC |
