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power switching N channel MOSFET JingYang TNM02K100KX with ultra low RDS ON and avalanche current rating

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power switching N channel MOSFET JingYang TNM02K100KX with ultra low RDS ON and avalanche current rating

Drain to Source Voltage : 100V

Current - Continuous Drain(Id) : 2.2A

RDS(on) : 260mΩ@4.5V,1A

Operating Temperature - : -55℃~+150℃

Gate Threshold Voltage (Vgs(th)) : 1V

Type : N-Channel

Reverse Transfer Capacitance (Crss@Vds) : 15pF@50V

Number : 1 N-channel

Output Capacitance(Coss) : 88pF

Pd - Power Dissipation : 2.5W

Input Capacitance(Ciss) : 330pF@50V

Gate Charge(Qg) : 5.2nC@10V

Description : N-Channel 100V 2.2A 2.5W Surface Mount SOT-23

Mfr. Part # : TNM02K100KX

Model Number : TNM02K100KX

Package : SOT-23

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Product Overview

The TNM02K100KX is a N-channel MOSFET designed for high-efficiency power switching applications. It features a high-density cell design for ultra-low RDS(ON), fully characterized avalanche voltage and current, and excellent package heat dissipation. This device is ideal for Uninterruptible Power Supplies (UPS), hard-switched and high-frequency circuits.

Product Attributes

Brand: JY Electronics
Package: SOT-23
Origin: China

Technical Specifications

Symbol	Parameter	Test Condition	Min.	Typ.	Max.	Units
Absolute Maximum Ratings (TC=25 unless otherwise specified)
V_DSS	Drain-Source Voltage		-	-	100	V
V_GSS	Gate-Source Voltage		-	-	±20	V
I_D	Continuous Drain Current	TC = 25	-	-	2.2	A
I_D	Continuous Drain Current	TC = 100	-	-	1.5	A
I_DM	Pulsed Drain Current	note1	-	-	12	A
P_D	Power Dissipation	TA = 25	-	2.5	-	W
P_D	Power Dissipation			3.9	-	W
			5	-	-	W
R_JA	Thermal Resistance, Junction to Ambient		-	50	-	/W
			-	32	-	/W
			-	25	-	/W
T_J, T_STG	Operating and Storage Temperature Range		-55	-	+150
Electrical Characteristics (TC=25 unless otherwise specified)
Off Characteristic
V_(BR)DSS	Drain-Source Breakdown Voltage	V_GS=0V,I_D=250μA	100	-	-	V
I_DSS	Zero Gate Voltage Drain Current	V_DS=100V, V_GS = 0V	-	-	1.0	μA
I_GSS	Gate to Body Leakage Current	V_DS =0V,V_GS = ±20V	-	-	±100	nA
On Characteristic
V_GS(th)	Gate Threshold Voltage	V_DS= V_GS, I_D=250μA	1.0	1.8	3.0	V
R_DS(on)	Static Drain-Source on-Resistance	note2 V_GS =10V, I_D =2A	-	250	280	mΩ
R_DS(on)	Static Drain-Source on-Resistance	V_GS =4.5V, I_D =1A	-	260	310	mΩ
g_FS	Forward Transconductance	V_DS =10V, I_D =3A	-	1.1	-	S
Dynamic Characteristic
C_iss	Input Capacitance	V_DS =50V, V_GS = 0V, f = 1.0MHz	-	330	-	pF
C_oss	Output Capacitance		-	88	-	pF
C_rss	Reverse Transfer Capacitance		-	15	-	pF
Gate Charge
Q_g	Total Gate Charge	V_DS =50V, I_D =1A, V_GS =10V	-	5.2	-	nC
Q_gs	Gate-Source Charge		-	1.0	-	nC
Q_gd	Gate-Drain(Miller) Charge		-	1.4	-	nC
Switching Characteristic
t_d(on)	Turn-on Delay Time	V_DD=50V,R_L=39Ω, R_G=1Ω, V_GS =10V	-	14	-	ns
t_r	Turn-on Rise Time		-	54	-	ns
t_d(off)	Turn-off Delay Time		-	18	-	ns
t_f	Turn-off Fall Time		-	11	-	ns
Drain-Source Diode Characteristic and Maximum Ratings
I_S	Maximum Continuous Drain to Source Diode Forward Current		-	-	3	A
I_SM	Maximum Pulsed Drain to Source Diode Forward Current		-	-	12	A
V_SD	Drain to Source Diode Forward Voltage	V_GS = 0V, I_S=1A	-	-	1.2	V

2405091033_JingYang-TNM02K100KX_C5307987.pdf

power switching N channel MOSFET JingYang TNM02K100KX with ultra low RDS ON and avalanche current rating Images

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