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Power mosfet for switching applications Jingdao Microelectronics F2N60 n channel high voltage device

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Power mosfet for switching applications Jingdao Microelectronics F2N60 n channel high voltage device

Drain to Source Voltage : 600V

Current - Continuous Drain(Id) : 2A

RDS(on) : 3.4Ω@10V

Operating Temperature - : -55℃~+150℃@(Tj)

Gate Threshold Voltage (Vgs(th)) : 2V

Type : N-Channel

Reverse Transfer Capacitance (Crss@Vds) : 12pF

Pd - Power Dissipation : 43W

Output Capacitance(Coss) : 66pF

Input Capacitance(Ciss) : 564pF

Gate Charge(Qg) : 13nC@10V

Description : N-Channel 600V 2A 43W Through Hole ITO-220ABW

Mfr. Part # : F2N60

Model Number : F2N60

Package : ITO-220ABW

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Product Overview

The F2N60 is a high voltage N-CHANNEL POWER MOSFET designed for high-speed switching applications. It offers improved characteristics such as fast switching time, low gate charge, low on-state resistance, and high rugged avalanche characteristics. This MOSFET is commonly used in switching power supplies and adaptors.

Product Attributes

Brand: Jingdao Microelectronics co.LTD
Model: F2N60
Package: ITO-220ABW
Material: "Green" molding compound, UL flammability classification 94V-0, "Halogen-free".
Certifications: RoHS compliant

Technical Specifications

Parameter	Symbol	Rating	Unit	Test Conditions
ABSOLUTE MAXIMUM RATINGS
Drain-Source Voltage	VDSS	600	V
Gate-Source Voltage	VGSS	±30	V
Continuous Drain Current	ID	2.1	A	Tc=25
Continuous Drain Current	ID	1.4	A	Tc=100
Pulsed Drain Current	IDM	43	A	Note 2
Power Dissipation	PD	140	W	Tc=25
Avalanche Energy Single Pulsed	EAS	63	mJ	Note 3
Peak Diode Recovery dv/dt	dv/dt	2.1	V/ns	Note 4
Operation Junction Temperature and Storage Temperature	TJ, stg	-55 ~ +150	°C
ELECTRICAL CHARACTERISTICS
Drain-Source Breakdown Voltage	BVDSS	600	V	VGS=0V, ID=250uA
Gate-Source Leakage Current	IGSS	±100	nA	VGS=±30V, VDS=0V
Drain-Source Leakage Current	IDSS	1	uA	VDS=600V, VGS=0V
Gate Threshold Voltage	VGS(TH)	2.0	V	VDS=VGS, ID=250uA
Static Drain-Source On-State Resistance	RDS(ON)	4.0	Ω	VGS=10V, ID=1.0A
Input Capacitance	CISS	564	pF	VDS=25V, VGS=0V, f=1.0MHz
Output Capacitance	COSS	66	pF	VDS=25V, VGS=0V, f=1.0MHz
Reverse Transfer Capacitance	CRSS	12	pF	VDS=25V, VGS=0V, f=1.0MHz
Total Gate Charge	QG	13	nC	VDS=480V, VGS=10V, ID=2A, IG=1mA (NOTE1,2)
Turn-On Delay Time	tD(ON)	7	ns	VDS=100V, VGS=10V, ID=2A, RG=25Ω (NOTE1,2)
Turn-On Rise Time	tR	22	ns	VDS=100V, VGS=10V, ID=2A, RG=25Ω (NOTE1,2)
Turn-Off Delay Time	tD(OFF)	16	ns	VDS=100V, VGS=10V, ID=2A, RG=25Ω (NOTE1,2)
Turn-Off Fall Time	tF	22	ns	VDS=100V, VGS=10V, ID=2A, RG=25Ω (NOTE1,2)
Maximum Body-Diode Continuous Current	IS	2.1	A
Maximum Body-Diode Pulsed Current	ISM	8	A
Drain-Source Diode Forward Voltage	VSD	1.4	V	IS=2A,VGS=0V
Reverse Recovery Time	trr	250	ns	IS=2A,VGS=0V, di/dt=100A/us
Reverse Recovery Charge	Qrr	4.5	uC	IS=2A,VGS=0V, di/dt=100A/us
THERMAL DATA
Junction to Ambient	RthJA	63	°C/W
Junction to Case	RthJC	2.9	°C/W

2209091800_Jingdao-Microelectronics-F2N60_C5157078.pdf

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