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N Channel Power MOSFET JSCJ CJAC150N03 Offering Low RDS ON and Suitable for High Frequency Circuits

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N Channel Power MOSFET JSCJ CJAC150N03 Offering Low RDS ON and Suitable for High Frequency Circuits

Drain to Source Voltage : 30V

Current - Continuous Drain(Id) : 150A

Operating Temperature - : -55℃~+150℃

RDS(on) : 2.1mΩ@4.5V

Gate Threshold Voltage (Vgs(th)) : 1.2V

Reverse Transfer Capacitance (Crss@Vds) : 600pF

Number : 1 N-channel

Input Capacitance(Ciss) : 5.4nF@15V

Pd - Power Dissipation : 130W

Gate Charge(Qg) : 60nC@4.5V

Description : 30V 150A 2.1mΩ@4.5V 1.2V 1 N-channel 130W PDFNWB-8L-EP(5x6) Single FETs, MOSFETs RoHS

Mfr. Part # : CJAC150N03

Model Number : CJAC150N03

Package : PDFNWB-8L-EP(5x6)

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Product Overview

The CJAC150N03, manufactured by JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD, is an N-Channel Power MOSFET utilizing advanced trench technology. It offers excellent RDS(ON) with low gate charge, making it suitable for a wide range of applications including battery switches, load switches, SMPS, general-purpose applications, hard switched and high-frequency circuits, and Uninterruptible Power Supplies. Key features include a high-density cell design for ultra-low RDS(ON), fully characterized avalanche voltage and current, good stability and uniformity with high EAS, an excellent package for good heat dissipation, and special process technology for high ESD capability.

Product Attributes

Brand: JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD (JSCJ)
Part Number: CJAC150N03
Package Type: PDFNWB5x6-8L
Channel Type: N-Channel
Marking: CJAC150N03

Technical Specifications

Parameter	Symbol	Test Condition	Min	Typ	Max	Unit
Off Characteristics
Drain-source breakdown voltage	V(BR)DSS	VGS = 0V, ID =250A	30			V
Zero gate voltage drain current	IDSS	VDS =24V, VGS =0V			1	A
Gate-body leakage current	IGSS	VDS =0V, VGS =20V			100	nA
On Characteristics
Gate-threshold voltage	VGS(th)	VDS =VGS, ID =250A	1.2	1.6	2.5	V
Static drain-source on-state resistance	RDS(on)	VGS =10V, ID =30A		1.6		m
Static drain-source on-state resistance	RDS(on)	VGS =4.5V, ID =15A		2.1		m
Forward transconductance	gFS	VDS =10V, ID =2A	17			S
Dynamic Characteristics
Input capacitance	Ciss	VDS =15V,VGS =0V, f =1MHz		5400		pF
Output capacitance	Coss
Reverse transfer capacitance	Crss
Switching Characteristics
Total gate charge	Qg	VGS=4.5V, VDS=15V, ID=24A		60		nC
Gate-source charge	Qgs
Gate-drain charge	Qg
Turn-on delay time	td(on)	VDS=15V,RL=0.75, VGS=10V,RG=1		20		ns
Turn-on rise time	tr
Turn-off delay time	td(off)
Turn-off fall time	tf
Drain-Source Diode Characteristics
Drain-source diode forward voltage	VSD	VGS =0V, IS=10A		1.0		V
Continuous drain-source diode forward current	IS				150	A
Pulsed drain-source diode forward current	ISM				600	A
Maximum Ratings
Drain-Source Voltage	VDS				30	V
Gate-Source Voltage	VGS			20		V
Continuous Drain Current	ID				150	A
Pulsed Drain Current	IDM				600	A
Single Pulsed Avalanche Energy	EAS			280		mJ
Power Dissipation	PD	Ta=25			130	W
Junction Temperature	TJ				150
Storage Temperature Range	Tstg		-55		+150
Thermal Resistance Junction to Ambient	RJA	FR-4 board, 2oz. Copper, still air		62.5		/W
Thermal Resistance Junction to Case	RJC			0.96		/W

2411121115_JSCJ-CJAC150N03_C504084.pdf

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