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Emitter-Base Voltage(Vebo) : 6V
Current - Collector Cutoff : 1uA
Pd - Power Dissipation : 3W
Transition frequency(fT) : 120MHz
type : PNP
Current - Collector(Ic) : 5A
Collector - Emitter Voltage VCEO : 60V
Operating Temperature : -55℃~+150℃
Description : Bipolar (BJT) Transistor PNP 60V 5A 120MHz 3W Surface Mount SOT-223
Mfr. Part # : FZT951TA
Model Number : FZT951TA
Package : SOT-223
High-performance PNP silicon planar transistors designed for high current applications. These devices offer very low saturation voltages and excellent gain characteristics, making them suitable for demanding power applications.
| Device Type | Complementary Type | Collector-Base Voltage (VCBO) | Collector-Emitter Voltage (VCEO) | Peak Pulse Current (ICM) | Continuous Collector Current (IC) | Power Dissipation (Ptot) | Collector-Base Breakdown Voltage (V(BR)CBO) | Collector-Emitter Breakdown Voltage (V(BR)CER) | Collector-Emitter Breakdown Voltage (V(BR)CEO) | Emitter-Base Breakdown Voltage (V(BR)EBO) | Collector Cut-Off Current (ICBO) | Collector Cut-Off Current (ICER) | Emitter Cut-Off Current (IEBO) | Collector-Emitter Saturation Voltage (VCE(sat)) | Base-Emitter Saturation Voltage (VBE(sat)) | Base-Emitter Turn-On Voltage (VBE(on)) | Static Forward Current Transfer Ratio (hFE) | Transition Frequency (fT) | Output Capacitance (Cobo) | Switching Times (ton/toff) |
| FZT951 | FZT851 | -100 V | -60 V | -15 A | -5 A | 3 W | -100 V | -100 V | -60 V | -6 V | -50 nA | -50 nA | -10 nA | -20 to -370 mV | -1080 to -1240 mV | -935 to -1070 mV | 10 to 300 | 120 MHz | 74 pF | 82/350 ns |
| FZT953 | FZT853 | -140 V | -100 V | -10 A | -5 A | 3 W | -140 V | -140 V | -100 V | -6 V | -50 nA | -50 nA | -10 nA | -20 to -460 mV | -1010 to -1170 mV | -925 to -1160 mV | 15 to 300 | 125 MHz | 65 pF | 110/460 ns |
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Silicon planar PNP transistor DIODES FZT951TA optimized for demanding power applications and high current Images |