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Automotive Grade NPN Transistor YANGJIE MMBT3904Q with UL94 V0 Flammability and AECQ101 Qualification

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Automotive Grade NPN Transistor YANGJIE MMBT3904Q with UL94 V0 Flammability and AECQ101 Qualification

Emitter-Base Voltage(Vebo) : 6V

Current - Collector Cutoff : 50nA

DC Current Gain : 300@10mA,1V

Vce Saturation(VCE(sat)) : 300mV@50mA,5mA

type : NPN

Pd - Power Dissipation : 300mW

Current - Collector(Ic) : 200mA

Collector - Emitter Voltage VCEO : 40V

Operating Temperature : -55℃~+150℃

Description : Bipolar (BJT) Transistor NPN 40V 200mA 300mW Surface Mount SOT-23

Mfr. Part # : MMBT3904Q

Model Number : MMBT3904Q

Package : SOT-23

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Product Overview

The MMBT3904Q is an NPN General Purpose Amplifier from Yangzhou Yangjie Electronic Technology Co., Ltd. It is AEC-Q101 qualified and features epoxy that meets UL-94 V-0 flammability rating and is halogen-free. This device is designed for automotive electronics applications.

Product Attributes

Brand: Yangzhou Yangjie Electronic Technology Co., Ltd.
Origin: China (implied by company name and website)
Certifications: RoHS Compliant, AEC-Q101 Qualified
Flammability Rating: UL-94 V-0
Halogen Free: Yes
Moisture Sensitivity Level: 1

Technical Specifications

Item	Symbol	Unit	Conditions	Value
Maximum Ratings	VCBO	V		60
	VCEO	V		40
	VEBO	V		6.0
	IC	mA	Continuous	200
	PD (*)	mW	Ta=25	300
Thermal Resistance	RthJA (*)	K/W		357
Junction Temperature	Tj			-55 to +150
Storage Temperature	TSTG			-55 to +150
Electrical Characteristics	V(BR)CEO	Vdc	IC =1.0mAdc,IB=0	40
	V(BR)CBO	Vdc	IC=10uAdc,IE=0	60
	V(BR)EBO	Vdc	IE=10Adc,IC=0	6.0
	ICBO	nAdc	VCB=60Vdc, IE =0	50
	ICEX	nAdc	VCE=30VdcC, VEB=3.0Vdc	50
	DC current gain	hFE		VCE=1Vdc,IC=0.1mAdc	40
hFE			VCE=1Vdc,IC=1.0mAdc	70
hFE			VCE=1Vdc,IC=10mAdc	100 - 300
hFE			VCE=1Vdc,IC=50mAdc	60
hFE			VCE=1Vdc,IC=100mAdc	30
Collector-emitter saturation voltage	VCE(sat)	Vdc	IC=10mAdc,IB=1.0mAdc	0.2
Collector-emitter saturation voltage	VCE(sat)	Vdc	IC=50mAdc,IB=5.0mAdc	0.3
Base-emitter saturation voltage	VBE(sat)	Vdc	IC=10mAdc,IB=1.0mAdc	0.65 - 0.85
Base-emitter saturation voltage	VBE(sat)	Vdc	IC=50mAdc,IB=5.0mAdc	0.95
Output Capacitance	Cobo	pF	VCB=5.0Vdc,f=1.0MHz,IE=0	4.0
Input Capacitance	Cibo	pF	VEB=0.5Vdc,f=1.0MHz,IC=0	8.0
Delay time	td	ns	VCC=3.0Vdc, VBE=0.5Vdc, IC=10mAdc,IB1=1.0mAdc	35
Rise time	tr	ns	VCC=3.0Vdc, VBE=0.5Vdc, IC=10mAdc,IB1=1.0mAdc	35
Storage time	ts	ns	VCC=3.0Vdc, IC=10mAdc,IB1=IB2=1.0mAdc	200
Fall time	tf	ns	VCC=3.0Vdc, IC=10mAdc,IB1=IB2=1.0mAdc	50

2411071803_YANGJIE-MMBT3904Q_C2942583.pdf

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