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PNP High Voltage Transistor DIODES FZT758TA with 400V Collector Base Breakdown Voltage SOT223 Package

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PNP High Voltage Transistor DIODES FZT758TA with 400V Collector Base Breakdown Voltage SOT223 Package

Emitter-Base Voltage(Vebo) : 7V

Current - Collector Cutoff : 100nA

Pd - Power Dissipation : 1.6W

Transition frequency(fT) : 50MHz

type : PNP

Current - Collector(Ic) : 500mA

Collector - Emitter Voltage VCEO : 400V

Operating Temperature : -55℃~+150℃

Description : Bipolar (BJT) Transistor PNP 400V 0.5A 50MHz 1.6W Surface Mount SOT-223

Mfr. Part # : FZT758TA

Model Number : FZT758TA

Package : SOT-223

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Product Overview

The FZT758 is a 400V PNP high voltage transistor in a SOT223 package. It offers a high continuous collector current of -500mA and a peak pulse current of -1A, with a low saturation voltage of less than -250mV at -50mA. This device features high current gain hold-up, with hFE greater than 40 specified up to -200mA. It is a complementary NPN type to the FZT658. The FZT758 is lead-free, RoHS compliant, and halogen and antimony free, making it a "Green" device. It is suitable for applications requiring specific change control, such as automotive applications qualified to AEC-Q100/101/200 standards.

Product Attributes

Brand: Diodes Incorporated
Package: SOT223
Material: Molded Plastic, "Green" Molding Compound
UL Flammability Rating: 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals Finish: Matte Tin Plated Leads
Weight: 0.112 grams (Approximate)
Compliance: Lead-Free Finish; RoHS Compliant; Halogen and Antimony Free. Green Device

Technical Specifications

Characteristic	Symbol	Value	Unit	Test Condition
Collector-Base Breakdown Voltage	BVCBO	-400	V	IC = -100A
Collector-Emitter Breakdown Voltage	BVCEO	-400	V	IC = -10mA
Emitter-Base Breakdown Voltage	BVEBO	-7	V	IE = -100A
Collector Cut-Off Current	ICBO	-100	nA	VCB = -320V
Collector Cut-Off Current	ICES	-100	nA	VCE = -320V
Emitter Cut-Off Current	IEBO	-20	nA	VEB = -6V
Collector-Emitter Saturation Voltage	VCE(sat)	-0.30	V	IC = -20mA, IB = -1mA
		-0.25		IC = -50mA, IB = -5mA
		-0.50		IC = -100mA, IB = -10mA
Base-Emitter Saturation Voltage	VBE(sat)	-0.9	V	IC = -100mA, IB = -10mA
Base-Emitter Turn-On Voltage	VBE(on)	-1.0	V	IC = -100mA, VCE = -5V
DC Current Gain	hFE	50		IC = -1mA, VCE = -5V
		50		IC = -100mA, VCE = -5V
		40		IC = -200mA, VCE = -10V
Current Gain-Bandwidth Product	fT	50	MHz	VCE = -20V, IC = -20mA, f = 20MHz
Output Capacitance	Cobo	20	pF	VCB = -20V, f = 1MHz
Switching Time (Turn-on)	ton	140	ns	IC = -100mA, VCC = -100V, IB1 = -10mA, IB2 = 20mA
Switching Time (Turn-off)	toff	2,000	ns	IC = -100mA, VCC = -100V, IB1 = -10mA, IB2 = 20mA
Power Dissipation	PD	3.0	W	(Note 5) Mounted on 50mm x 50mm 2oz copper FR4 PCB, still air
Power Dissipation	PD	2.0	W	(Note 6) Mounted on 25mm x 25mm 2oz copper FR4 PCB, still air
Power Dissipation	PD	1.6	W	(Note 7) Mounted on 25mm x 25mm 1oz copper FR4 PCB, still air
Power Dissipation	PD	1.2	W	(Note 8) Mounted on minimum recommended pad layout, still air
Thermal Resistance, Junction to Ambient	RJA	41.7	C/W	(Note 5) Mounted on 50mm x 50mm 2oz copper FR4 PCB, still air
Thermal Resistance, Junction to Ambient	RJA	62.5	C/W	(Note 6) Mounted on 25mm x 25mm 2oz copper FR4 PCB, still air
Thermal Resistance, Junction to Ambient	RJA	78.1	C/W	(Note 7) Mounted on 25mm x 25mm 1oz copper FR4 PCB, still air
Thermal Resistance, Junction to Ambient	RJA	104	C/W	(Note 8) Mounted on minimum recommended pad layout, still air
Thermal Resistance Junction to Lead	RJL	12.9	C/W	(Note 9)
Operating and Storage Temperature Range	TJ, TSTG	-55 to +150	C
Electrostatic Discharge (Human Body Model)	ESD HBM	4,000	V	JEDEC Class 3A
Electrostatic Discharge (Machine Model)	ESD MM	400	V	JEDEC Class C

2412251154_DIODES-FZT758TA_C99123.pdf

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