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Low Saturation Voltage PNP Transistor DIODES FMMT718TA SOT23 Package Lead Free RoHS Compliant Device

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Low Saturation Voltage PNP Transistor DIODES FMMT718TA SOT23 Package Lead Free RoHS Compliant Device

Emitter-Base Voltage(Vebo) : 7V

Current - Collector Cutoff : 100nA

Pd - Power Dissipation : 625mW

Transition frequency(fT) : 150MHz

type : PNP

Current - Collector(Ic) : 1.5A

Collector - Emitter Voltage VCEO : 20V

Operating Temperature : -55℃~+150℃

Description : Bipolar (BJT) Transistor PNP 20V 1.5A 150MHz 625mW Surface Mount SOT-23

Mfr. Part # : FMMT718TA

Model Number : FMMT718TA

Package : SOT-23

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Product Overview

The FMMT718 is a 20V PNP Silicon Low Saturation Transistor in a SOT23 package. It offers a continuous collector current of -1.5A and a peak pulse current of -6A. Key features include a low saturation voltage (VCE(sat) < -200mV @ -1A) and a low equivalent on-resistance (RCE(SAT) = 97m). The transistor is designed for applications requiring high current gain hold-up and is complementary to the NPN type FMMT618. It is available in a "Green" device, meaning it is totally lead-free, fully RoHS compliant, and halogen- and antimony-free. An automotive-compliant part (FMMT718Q) is also available.

Product Attributes

Brand: Diodes Incorporated
Package: SOT23
Material: Molded plastic, Green molding compound
Certifications: Totally Lead-Free & Fully RoHS compliant, Halogen- and Antimony-Free (Green Device)
Compliance: AEC-Q100/101/200 (for automotive variant), IATF 16949 certified facilities (for automotive variant)
Origin: Not specified in the provided text
Color: Not specified in the provided text

Technical Specifications

Characteristic	Symbol	Value	Unit	Test Condition
Collector-Base Breakdown Voltage	BVCBO	-20	V	IC = -100A
Collector-Emitter Breakdown Voltage	BVCEO	-20	V	IC = -10mA
Emitter-Base Breakdown Voltage	BVEBO	-7	V	IE = -100A
Collector Cutoff Current	ICBO	-100	nA	VCB = -15V
Emitter Cutoff Current	IEBO	-100	nA	VEB = -4V
Collector Emitter Cutoff Current	ICES	-100	nA	VCE= -15V
Static Forward Current Transfer Ratio	hFE	300-475	-	IC = -10mA, VCE = -2V
Static Forward Current Transfer Ratio	hFE	300-450	-	IC = -100mA, VCE = -2V
Static Forward Current Transfer Ratio	hFE	150-230	-	IC = -2A, VCE = -2V
Static Forward Current Transfer Ratio	hFE	35-70	-	IC = -4A, VCE = -2V
Static Forward Current Transfer Ratio	hFE	15-30	-	IC = -6A, VCE = -2V
Collector-Emitter Saturation Voltage	VCE(sat)	-16 to -40	mV	IC =- 0.1A, IB = -10mA
Collector-Emitter Saturation Voltage	VCE(sat)	-130 to -200	mV	IC = -1A, IB = -20mA
Collector-Emitter Saturation Voltage	VCE(sat)	-145 to -220	mV	IC = -1.5A, IB = -50mA
Base-Emitter Turn-On Voltage	VBE(on)	-0.81 to -1.0	V	IC = -2A, VCE = -2V
Base-Emitter Saturation Voltage	VBE(sat)	-0.87 to -1.0	V	IC = -1.5A, IB = -50mA
Output Capacitance	Cobo	34-43	pF	VCB = -10V, f = 1MHz
Transition Frequency	fT	150-180	MHz	VCE = -10V, IC = -50mA, f = 100MHz
Turn-On Time	ton	68	ns	VCC = -10V, IC = -1A, IB1 = IB2 = -20mA
Turn-Off Time	toff	270	ns	VCC = -10V, IC = -1A, IB1 = IB2 = -20mA
Continuous Collector Current	IC	-1.5	A	@ TA = +25C
Peak Pulse Current	ICM	-6	A	@ TA = +25C
Power Dissipation	PD	625	mW	@ TA = +25C (Note 5)
Power Dissipation	PD	806	mW	@ TA = +25C (Note 6)
Thermal Resistance, Junction to Ambient	RJA	200	C/W	(Note 5)
Thermal Resistance, Junction to Ambient	RJA	155	C/W	(Note 6)
Operating and Storage Temperature Range	TJ, TSTG	-55 to +150	C
Electrostatic Discharge - Human Body Model	ESD HBM	4,000	V	JEDEC Class 3A
Electrostatic Discharge - Machine Model	ESD MM	400	V

2412251150_DIODES-FMMT718TA_C74079.pdf

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