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Current - Collector Cutoff : 100nA
Emitter-Base Voltage(Vebo) : 5V
Pd - Power Dissipation : 300mW
Transition frequency(fT) : 100MHz
type : NPN
Current - Collector(Ic) : 2A
Collector - Emitter Voltage VCEO : 50V
Operating Temperature : -65℃~+150℃@(Tj)
Description : 300mW NPN 2A 50V SOT-23 Single Bipolar Transistors RoHS
Mfr. Part # : PBSS4350T-GK
Model Number : PBSS4350T-GK
Package : SOT-23
PBSS4350T is a Silicon NPN transistor in a SOT-23 Plastic Package. It offers low VCE(sat) and high current capabilities, making it suitable for general purpose switching and muting applications. Key features include its suitability for LCD back-lighting and supply line switching circuits.
| Parameter | Symbol | Test Conditions | Min | Typ | Max | Unit |
| Collector Cut-Off Current | ICBO | IE=0, VCB=50V | 100 | nA | ||
| Collector Cut-Off Current | ICBO | IE=0, Tj=150, VCB=50V | 50 | A | ||
| Emitter Cut-Off Current | IEBO | VEB=5.0V, IC=0 | 100 | nA | ||
| DC Current Gain | hFE(1) | VCE=2.0V, IC=100mA | 300 | |||
| DC Current Gain | hFE(2) | VCE=2.0V, IC=500mA | 300 | |||
| DC Current Gain | hFE(3) | VCE=2.0V, IC=1.0A | 300 | |||
| DC Current Gain | hFE(4) | VCE=2.0V, IC=2.0A | 200 | |||
| DC Current Gain | hFE(5) | VCE=2.0V, IC=3.0A | 100 | |||
| Collector Emitter Saturation Voltage | VCE(sat)(1) | IC=500mA, IB=50mA | 80 | mV | ||
| Collector Emitter Saturation Voltage | VCE(sat)(2) | IC=2.0A, IB=100mA | 280 | mV | ||
| Equivalent On-Resistance | RCE(sat) | IC=2.0A, IB=200mA | 100 | 130 | m | |
| Base Emitter Saturation Voltage | VBE(sat) | IC=2.0A, IB=100mA | 1.1 | V | ||
| Base Emitter Saturation Voltage | VBE(sat) | IC=3.0A, IB=300mA | 1.2 | V | ||
| Base Emitter Voltage | VBE(ON) | VCE=2.0V, IC=1.0A | 1.2 | V | ||
| Transition Frequency | fT | IC=100mA, VCE=5.0V, f=100MHz | 100 | MHz | ||
| Collector Capacitance | CC | IE=0, VCB=10V, f=1.0MHz | 25 | pF |
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PBSS4350T-GK Silicon NPN Transistor Designed for LCD Backlighting and Supply Line Switching Circuits Images |