Home > Single Bipolar Transistors >

NPN Silicon Epitaxial Planar Transistor GOODWORK BC847BW for General Purpose Switching Applications

Product Categories

Bridge Rectifiers [1296]
Single Bipolar Transistors [2284]
JFETs [73]
Power Driver Modules [154]
Current Regulation - Diodes, Transistors [4]
Single IGBTs [550]
DIACs, SIDACs [39]
Single, Pre-Biased Bipolar Transistors [1371]
SCRs [158]
SCRs - Modules [48]
TRIACs [559]
RF Diodes [12]
Single Diodes [3000]
Single Zener Diodes [3000]
Variable Capacitance (Varicaps, Varactors) [79]
Single FETs, MOSFETs [3000]

Hefei Purple Horn E-Commerce Co., Ltd.

Trust Seal

Verified Supplier

Credit Check

Supplier Assessment

Contact Now

NPN Silicon Epitaxial Planar Transistor GOODWORK BC847BW for General Purpose Switching Applications

Emitter-Base Voltage(Vebo) : 6V

Current - Collector Cutoff : 15nA

Pd - Power Dissipation : 200mW

Transition frequency(fT) : 100MHz

type : NPN

Current - Collector(Ic) : 100mA

Collector - Emitter Voltage VCEO : 45V

Operating Temperature : -55℃~+150℃@(Tj)

Description : 200mW NPN 100mA 45V SOT-323 Single Bipolar Transistors RoHS

Mfr. Part # : BC847BW

Model Number : BC847BW

Package : SOT-323

Contact Now

Product Overview

NPN Silicon Epitaxial Planar Transistor designed for general purpose and switching applications. This transistor offers reliable performance and is suitable for a wide range of electronic circuits.

Product Attributes

Brand: Not specified
Origin: Not specified
Material: Silicon Epitaxial Planar
Color: Not specified
Certifications: Not specified

Technical Specifications

Parameter	Symbol	BC846W	BC847W	BC848W	Unit
Absolute Maximum Ratings (Ta = 25 OC)
Collector Base Voltage	VCBO	80	50	30	V
Collector Emitter Voltage	VCEO	65	45	30	V
Emitter Base Voltage	VEBO	6	6	5	V
Collector Current	IC	100			mA
Peak Collector Current	ICM	200			mA
Total Power Dissipation	Ptot	200			mW
Junction Temperature	Tj	150			OC
Storage Temperature Range	Tstg	- 55 to + 150			OC
Characteristics at Ta = 25 OC
DC Current Gain at VCE = 5 V, IC = 2 mA	hFE	110	200	420	-
DC Current Gain at VCE = 5 V, IC = 2 mA	hFE	220	450	800	-
Collector Base Voltage at IC = 10 A	VCBO	80	50	30	V
Collector Emitter Voltage at IC = 10 mA	VCEO	65	45	30	V
Emitter Base Voltage at IE = 1 A	VEBO	6	6	5	V
Collector Base Cutoff Current at VCB = 30 V	ICBO	15			nA
Emitter Base Cutoff Current at VEB = 5 V	IEBO	100			nA
Collector Emitter Saturation Voltage at IC = 10 mA, IB = 0.5 mA	VCE(sat)	0.25			V
Collector Emitter Saturation Voltage at IC = 100 mA, IB = 5 mA	VCE(sat)	0.6			V
Base Emitter Voltage at VCE = 5 V, IC = 2 mA	VBE	0.58	-	-	V
Base Emitter Voltage at VCE = 5 V, IC = 10 mA	VBE	-	0.7	0.77	V
Transition Frequency at VCE = 5 V, IC = 10 mA, f = 100 MHz	fT	100			MHz
Collector Output Capacitance at VCB = 10 V, IE = 0, f = 1 MHz	Cob	4.5			pF

2508261540_GOODWORK-BC847BW_C50581516.pdf

Quality NPN Silicon Epitaxial Planar Transistor GOODWORK BC847BW for General Purpose Switching Applications for sale

NPN Silicon Epitaxial Planar Transistor GOODWORK BC847BW for General Purpose Switching Applications Images

Inquiry Cart 0

Send your message to this supplier


*From:	Your email address is incorrect!
*To:	Hefei Purple Horn E-Commerce Co., Ltd.
*Subject:	Subject is empty!
*Message:	For the best results, we recommend including the following details: -Self introduction -Required specifications -Inquire about price/MOQ Characters Remaining: (0/3000) Please enter 20 to 3000 characters to contact this supplier!