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650V High Speed Switching IGBT VBsemi Elec VBP165I80 with Ultra Low Gate Charge and Avalanche Energy Rating

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650V High Speed Switching IGBT VBsemi Elec VBP165I80 with Ultra Low Gate Charge and Avalanche Energy Rating

Description : TO-247 Single IGBTs RoHS

Mfr. Part # : VBP165I80

Model Number : VBP165I80

Package : TO-247

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Product Overview

The VBP165I80 is a 650V Trench and Fieldstop IGBT designed for high-speed switching applications. It offers very low VCEsat, low turn-off losses, and ultra-low gate charge (Qg), making it suitable for demanding power supply applications. Key features include a maximum junction temperature of 175C and avalanche energy rating (UIS). This IGBT is ideal for use in telecommunications, lighting, consumer electronics, industrial equipment, and renewable energy systems, including server and telecom power supplies, HID lighting, fluorescent ballast lighting, ATX power supplies, welding, battery chargers, solar inverters, and switch-mode power supplies (SMPS).

Product Attributes

  • Brand: VBsemi
  • Model: VBP165I80
  • Package Type: TO-247
  • Certifications: RoHS compliant, Halogen-free

Technical Specifications

Parameter Symbol Test Conditions Min. Typ. Max. Unit
Collector-Emitter Voltage VCE 650 V
Gate-Emitter Voltage VGE 20 V
Continuous Collector Current IC TC=25 160 A
Continuous Collector Current IC TC=100 80 A
Pulsed Collector Current ICM 240 A
Maximum Power Dissipation PD TC = 25 C 510 W
Maximum Power Dissipation PD TC = 100 C 260 W
Operating Junction and Storage Temperature Range TJ, Tstg -55 +175 C
Short Circuit Withstand Time tSC VGE= 15V, VCE400V, TC=150 3 s
Short Circuit Withstand Time tSC VGE= 15V, VCE330V, TC=100 5 s
Soldering Recommendations (Peak Temperature) for 10 s 260 C
Collector-Emitter Breakdown Voltage BVCES VGE = 0 V, IC = 250 A 650 V
Gate-Source Threshold Voltage VGE(th) VCE = VGE, ID = 250 A 4 5 6 V
Zero Gate Voltage Collector Current ICES VCE = 650 V,VGE = 0 V,TJ = 25 C 1 20 A
Zero Gate Voltage Collector Current ICES VCE = 650 V,VGE = 0 V,TJ = 150 C 1000 A
Gate-Emitter Leakage Current IGES VCE = 0 V, VGS = 20 V 100 nA
Collector-Emitter Saturation Voltage VCE(sat) VGE = 15 V, IC = 80 A 1.42 1.7 V
Forward Transconductance gfs VCE = 20 V, IC = 80 A 40 S
Input Capacitance Cies VGE = 0 V, VCE = 25 V, f = 500 KHz 8400 pF
Output Capacitance Coes 230 pF
Reverse Transfer Capacitance Cres 80 pF
Total Gate Charge Qg IC = 80 A, VCE = 400 V, VGE = 15 V 196 nC
Gate-Emitter Charge Qge 21 nC
Gate to Collector Charge Qgc 23 nC
Turn-On Delay Time td(on) VCE = 400 V , VGE = 0 /15V, IC = 80 A, Rg = 10 80 ns
Rise Time tr 75 ns
Turn-Off Delay Time td(off) 95 ns
Fall Time tf 35 ns
Internal emitter inductance LE measured 5 mm 13 nH
Diode Forward Current IF 80 A
Pulsed Diode Forward Current IFM 240 A
Diode Forward Voltage VF IF = 80 A 2.1 2.5 V
Reverse Recovery Time trr TJ = 25 C, IF = 80 A, dIF/dt = 200 A/s, VR = 400 V 90 ns
Reverse Recovery Charge Qrr 0.15 C
Reverse Recovery Current IRRM 1 5 A
Maximum Junction-to-Ambient Thermal Resistance RthJA 40 C/W
Maximum Junction-to-Case Thermal Resistance RthJC 0.5 C/W

2412131800_VBsemi-Elec-VBP165I80_C42412805.pdf


Quality 650V High Speed Switching IGBT VBsemi Elec VBP165I80 with Ultra Low Gate Charge and Avalanche Energy Rating for sale

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