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Surface mount NPN transistor with built in biasing resistors DIODES ADTC114ECAQ-13 lead free and halogen free green device

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Surface mount NPN transistor with built in biasing resistors DIODES ADTC114ECAQ-13 lead free and halogen free green device

Output Voltage(VO(on)) : 300mV

Input Resistor : 10kΩ

Resistor Ratio : -

Collector - Emitter Voltage VCEO : 50V

Description : Pre-Biased Bipolar Transistor (BJT) 1 NPN Pre-Biased Transistor 50V 100mA 310mW Surface Mount SOT-23

Mfr. Part # : ADTC114ECAQ-13

Model Number : ADTC114ECAQ-13

Package : SOT-23

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Product Overview

The ADTC114ECAQ is an NPN pre-biased small signal surface mount transistor featuring epitaxial planar die construction and built-in biasing resistors (R1 = R2). It is a complementary PNP type available (ADTA), totally lead-free, fully RoHS compliant, and a halogen and antimony free "Green" device. Qualified to AEC-Q101 standards for high reliability and PPAP capable, this transistor is suitable for automotive applications.

Product Attributes

Brand: Diodes Incorporated
Construction: Epitaxial Planar Die
Biasing Resistors: Built-in (R1 = R2)
Compliance: Totally Lead-Free & Fully RoHS compliant, Halogen and Antimony Free "Green" Device
Certifications: AEC-Q101 Qualified, PPAP Capable
Case Material: Molded Plastic, "Green" Molding Compound
UL Flammability Classification: 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Matte Tin Plated Leads, Solderable per MIL-STD-202, Method 208

Technical Specifications

Characteristic	Symbol	Value	Unit	Test Condition
Absolute Maximum Ratings
Supply Voltage <Pin: (3) to (2)>	VCC	50	V
Input Voltage <Pin: (1) to (2)>	VIN	-10 to +40	V
Output Current	IO	50	mA
Output Current (Max)	IC (Max)	100	mA
Thermal Characteristics
Power Dissipation (Note 6)	PD	310	mW	@TA = +25C
Thermal Resistance, Junction to Ambient Air (Note 6)	RJA	403	C/W	@TA = +25C
Operating and Storage Temperature Range	TJ, TSTG	-55 to +150	C
Electrical Characteristics
Input Voltage (OFF) (Note 7)	Vl(OFF)	0.5 1.1	V	VCC = 5V, IO = 100A
Input Voltage (ON) (Note 8)	Vl(ON)	1.9 3	V	VO = 0.3V, IO = 10mA
Output Voltage	VO(on)	0.1 0.3	V	IO/Il = 10mA/0.5mA
Input Current	Il	0.88	mA	VI = 5V
Output Current (off)	IO(off)	0.5	A	VCC = 50V, VI = 0V
DC Current Gain	Gl	30		VO = 5V, IO = 5mA
Input Resistor Tolerance	R1	-30 +30	%
Resistance Ratio Tolerance	R2/R1	-20 +20	%
Gain-Bandwidth Product (Note 9)	fT	250	MHz	VCE = 10V, IE = 5mA, f = 100MHz

2308101656_DIODES-ADTC114ECAQ-13_C5245711.pdf

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