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Capacitance Ratio : 2.5@C2V/C10V
DC Reverse Voltage(Vr) : 16V
Diode Configuration : Independent
Series Resistance (Rs) : 150mΩ
Diode Capacitance : 6.5pF@10V,1MHz
Description : 2.5@C2V/C10V 16V Independent 150mΩ 6.5pF@10V,1MHz SOD-323 Variable Capacitance (Varicaps, Varactors) RoHS
Mfr. Part # : BBY 55-03W E6327
Model Number : BBY 55-03W E6327
Package : SOD-323
The BBY55 series are Silicon Tuning Diodes designed for low tuning voltage operation in VCOs for mobile communications equipment. These hyperabrupt tuning diodes offer excellent linearity, high Q, and low series resistance. They are available in packages with very low capacitance spread and are Pb-free (RoHS compliant).
| Model | Type | Package | Configuration | LS (nH) | Marking |
|---|---|---|---|---|---|
| BBY55-02V | Tuning Diode | SC79 | single | 0.6 | 77 white |
| BBY55-02W | Tuning Diode | SCD80 | single | 0.6 | 7 |
| BBY55-03W | Tuning Diode | SOD323 | single | 1.8 | 7 |
| Parameter | Symbol | Value | Unit | Condition | |
|---|---|---|---|---|---|
| Diode reverse voltage | VR | 16 | V | TA = 25C | |
| Forward current | IF | 20 | mA | TA = 25C | |
| Operating temperature range | Top | -55 ... 150 | C | ||
| Storage temperature | Tstg | -55 ... 150 | C | ||
| Reverse current | IR | - | nA | VR = 15 V, TA = 25C | |
| Reverse current | IR | - | 100 | nA | VR = 15 V, TA = 85C |
| Diode capacitance | CT | 17.5 - 19.6 | pF | VR = 1 V, f = 1 MHz | |
| Diode capacitance | CT | 14 - 16 | pF | VR = 2 V, f = 1 MHz | |
| Diode capacitance | CT | 11.6 - 13.6 | pF | VR = 3 V, f = 1 MHz | |
| Diode capacitance | CT | 10 - 12 | pF | VR = 4 V, f = 1 MHz | |
| Diode capacitance | CT | 5.5 - 6.5 | pF | VR = 10 V, f = 1 MHz | |
| Capacitance ratio | CT2/CT10 | 2 - 3 | VR = 2 V, VR = 10 V, f = 1 MHz | ||
| Series resistance | rS | - 0.4 | VR = 5 V, f = 470 MHz | ||
| Series resistance | rS | - 0.15 | VR = 5 V, f = 470 MHz |
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Pb Free Silicon Tuning Diode Infineon BBY 55-03W E6327 with Low Series Resistance and High Linearity Images |