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Holding Current (Ih) : 60mA
Current - Gate Trigger(Igt) : 35mA
Voltage - On State(Vtm) : 1.5V
Average Gate Power Dissipation (PG(AV)) : 1W
Current - On State(It(RMS)) : 25A
Peak off - state voltage(Vdrm) : 800V
Current - Surge(Itsm@f) : 250A@50Hz
SCR Type : 1 TRIAC
Operating Temperature : -40℃~+125℃
Gate Trigger Voltage (Vgt) : 1.3V
Description : 60mA 35mA 800V 1 TRIAC TO-220B TRIACs RoHS
Mfr. Part # : BTB26-800CW
Model Number : BTB26-800CW
Package : TO-220B
The BTA26/BTB26 series triacs from Jiangsu Weida Semiconductor Co., Ltd. are designed for high current shock loading with excellent resistance to electromagnetic interference and high dv/dt rates. They offer superior commutation performance, making them particularly suitable for inductive loads. The BTA26 series provides a rated insulation voltage of 2500 VRMS, complying with UL standards.
| Parameter | Symbol | Value | Unit | Notes |
| RMS On-State Current | IT(RMS) | 25 | A | |
| Repetitive Peak Off-State Voltage | VDRM | 600/800/1200/1600 | V | |
| Repetitive Peak Reverse Voltage | VRRM | 600/800/1200 | V | |
| On-State Voltage (Max) | VTM | 1.5 | V | ITM=35A, tp=380s, Tj=25 |
| Non-Repetitive Surge Peak On-State Current | ITSM | 250 | A | Full cycle, F=50Hz |
| I2t Value for Fusing | I2t | 340 | A2s | tp=10ms |
| Critical Rate of Rise of On-State Current | dI/dt | 50 | A/s | IG=2IGT |
| Peak Gate Current | IGM | 4 | A | |
| Average Gate Power Dissipation | PG(AV) | 1 | W | |
| Peak Gate Power | PGM | 10 | W | |
| Storage Junction Temperature Range | Tstg | -40~150 | ||
| Operating Junction Temperature Range | Tj | -40~125 | ||
| Off-State Leakage Current | IDRM/IRRM | 10 (Tj=25) / 3 (Tj=125) | A | VDRM=VRRM |
| Gate Trigger Current (Max) | IGT | 25 to 70 | mA | See Electrical Characteristics for Quadrant details |
| Gate Trigger Voltage (Max) | VGT | 1.3 to 1.5 | V | |
| Holding Current (Max) | IH | 60 to 100 | mA | See Electrical Characteristics for Quadrant details |
| Latching Current (Max) | IL | 70 to 100 | mA | See Electrical Characteristics for Quadrant details |
| Critical Rate of Rise of Off-State Voltage | dV/dt | 200 to 1500 | V/s | Gate open, Tj=125 |
| Junction to Case Thermal Resistance (AC) | Rth(j-c) | 1.0 to 2.1 | /W | Package dependent |
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Durable WEIDA BTB26-800CW Triac 25A 800V RMS On State Current with Superior Shock Loading Resistance Images |